P‐78: Atomic‐scale sidewall passivation for microLED devices

The rapid adoption of the microLED technology marks a new chapter for emission‐based displays offering much better image quality, higher contrast, wider color gamut, faster response time, and lower power consumption. However, due to sidewall non‐radiative recombination, microLEDs suffer from poor efficiency when the chip size is decreased. This paper demonstrates that the microLED efficiency can be substantially increased with atomic‐scale crystalline oxide passivation, enabling a new pathway in realizing the next‐generation displays with the required performance levels.