石墨烯
双极扩散
材料科学
纳米技术
兴奋剂
电子迁移率
理想(伦理)
带隙
电子
光电子学
计算机科学
物理
量子力学
哲学
认识论
作者
Hong‐Yan Chen,Joerg Appenzeller
出处
期刊:Nano Letters
[American Chemical Society]
日期:2012-03-27
卷期号:12 (4): 2067-2070
被引量:49
摘要
Graphene has captured the imagination of researchers worldwide as an ideal two-dimensional material with exceptional electrical transport properties. The high electron and hole mobility quickly inspired scientists to search for electronic applications that require high-performance channel materials. However, the absence of a bandgap in graphene immediately revealed itself in terms of ambipolar device characteristics and the nonexistence of a device off-state. The question is: How can the superior electronic properties of graphene be harvested while dealing appropriately with its unique characteristics rather than enforcing conventional device concepts? Here, we report a novel device idea, a graphene-based frequency tripler, an application that employs an innovative electrostatic doping approach and exploits the unique ambipolar behavior of graphene.
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