Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics

Abstract Integrated circuit (IC) industry has fully considered the fact that the Moore’s Law is slowing down or ending. Alternative solutions are highly and urgently desired to break the physical size limits in the More-than-Moore era. Integrated silicon photonics technology exhibits distinguished potential to achieve faster operation speed, less power dissipation, and lower cost in IC industry, because their COMS compatibility, fast response, and high monolithic integration capability. Particularly, compared with other on-chip resonators ( e.g. microrings, 2D photonic crystal cavities) silicon-on-insulator (SOI)-based photonic crystal nanobeam cavity (PCNC) has emerged as a promising platform for on-chip integration, due to their attractive properties of ultra-high Q / V , ultra-compact footprints and convenient integration with silicon bus-waveguides. In this paper, we present a comprehensive review on recent progress of on-chip PCNC devices for lasing, modulation, switching/filting and label-free sensing, etc.