2D MoS2-Based Threshold Switching Memristor for Artificial Neuron

In this work, we use a two-terminal 2D MoS ₂ -based memristive device to emulate an artificial neuron. The Au/MoS ₂ /Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 10 ⁶ , originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.