纳米
硫化铜
铜
硫系化合物
材料科学
硫化物
电极
光电子学
偏压
纳米技术
电压
电气工程
化学
冶金
复合材料
物理化学
工程类
作者
Toshitsugu Sakamoto,H. Sunamura,H. Kawaura,Tsuyoshi Hasegawa,Tomonobu Nakayama,Masakazu Aono
摘要
We describe a nanometer-scale switch that uses a copper sulfide film and demonstrate its performance. The switch consists of a copper sulfide film, which is a chalcogenide semiconductor, sandwiched between copper and metal electrodes. Applying a positive or negative voltage to the metal electrode can repeatedly switch its conductance in under 100 μs. Each state can persist without a power supply for months, demonstrating the feasibility of nonvolatile memory with its nanometer scale. While biasing voltages, copper ions can migrate in copper sulfide film and can play an important role in switching.
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