High-power laser diode at 9xx nm with 81.10% efficiency

In this study, a low-resistance, low-loss, continuously gradual composition extreme double asymmetric (CGC-EDAS) epitaxial structure is designed to improve efficiency. The structure and facet reflectivity of the broad area (BA) lasers are optimized to maximize the power conversion efficiency ( PCE ). In the experiment, the peak PCE of 75.36% is measured at 25°C. At 0°C, a peak PCE of 81.10% is measured and the PCE can still reach 77.84% at an output power of 17.10 W, which, to the best of our knowledge, is the highest value to date for any BA lasers.