绝缘体上的硅
CMOS芯片
光电子学
电容感应
电容器
电压
材料科学
探测器
逻辑门
电气工程
物理
作者
Dennis Andrade-Miceli,Ali Esmailiyan,Pierre Bisiaux,Elena Blokhina,Teerachot Siriburanon,Imran Bashir,Mike Asker,Dirk Leipold,Robert Bogdan Staszewski
出处
期刊:International Microwave Symposium
日期:2021-06-07
标识
DOI:10.1109/ims19712.2021.9574910
摘要
This brief presents two monolithically integrated output-capacitor-less (“caples”) low-drop-out (LDO) linear regulators implemented in 22-nm fully depleted silicon-on-insulator (FD-SOI) to support on-die scalable CMOS charge-based quantum processing unit (QPU). The proposed LDOs are used to regulate 0.8 V and 1.5 V input voltages for the programmable capacitive digital-to-analog converter (CDAC) and single-electron detector, respectively. Measured results show that both LDOs can maintain their respective output voltages with a maximum deviation <2% from ~270 K down to ~ 3.7 K.
科研通智能强力驱动
Strongly Powered by AbleSci AI