Improved efficiency of AlGaN-based flip-chip deep-ultraviolet LEDs using a Ni/Rh/Ni/Au p-type electrode

Here, we propose a thermally stable and high-reflectivity Ni/Rh/Ni/Au p-type electrode for AlGaN-based deep-ultraviolet (DUV) flip-chip light-emitting diodes (FCLEDs). We discover that the reflectance of Ni/Au electrode deteriorated significantly after rapid thermal annealing. Experiments show that Ni and Au agglomerate at high temperatures, and more incident photons traverse the gaps between the agglomerates, leading to a decrease in reflectance of Ni/Au after annealing. In contrast, the proposed Ni/Rh/Ni/Au p-type electrode shows remarkable thermal stability as a result of the suppression of Ni agglomeration by the Rh layer at high temperatures. Besides, due to the higher reflectivity of the Ni/Rh/Ni/Au electrode and its lower specific contact resistivity formed with p-GaN, the external quantum efficiency and wall-plug efficiency of a DUV FCLED with Ni/Rh/Ni/Au electrode are increased by 13.94% and 17.30% in comparison with the one with Ni/Au electrode at an injection current of 100 mA. The Ni/Rh/Ni/Au electrode effectively solves the long-standing dilemma of efficiency degradation of DUV FCLEDs with a Ni/Au electrode after high-temperature annealing.