Molybdenum disulfide with a direct band gap has been synthesized in atmospheric pressure by chemical vapor deposition (CVD).MoS 2 atomic sheets are synthesized on SiO 2 substrates by using MoO 3 and S powders as the reactants.The process was based on the alteration of MoO 3 to MoO 2 by sulfurization.Successful fabrication and characterization of MoS 2 domains have been completed.Two applications have been chosen firstly we transferred MoS 2 layer to the carbon electrode.Electrochemical hydrogen evolution reaction (HER) test for continuous MoS 2 monolayers on carbon electrodes has been investigated.In another application a fieldeffect transistor of MoS 2 monolayer has been investigated .