极化子
材料科学
替代(逻辑)
纳米技术
工程物理
化学物理
凝聚态物理
计算机科学
物理
程序设计语言
量子力学
电子
作者
Jiachen Wang,Jing Bai,Yan Zhang,Lei Li,Zhou Chen,Tingsheng Zhou,Jinhua Li,Hong Zhu,Baoxue Zhou
标识
DOI:10.1021/acsami.2c23169
摘要
Bismuth vanadate (BiVO4) as a fascinating semiconductor for photoelectrocatalytic (PEC) water oxidation with suitable band gap (Eg) has been limited by the issue of poor separation and transportation of charge carriers. Herein, we propose an unconventional substitution of V5+ sites by Ti4+ in BiVO4 (Ti:BiVO4) for the similar ionic radii and accelerated polaron hopping. Ti:BiVO4 increased the photocurrent density 1.90 times up to 2.51 mA cm–2 at 1.23 V vs RHE and increased the charge carrier density 1.81 times to 5.86 × 1018 cm–3. Compared with bare BiVO4, Ti:BiVO4 improves the bulk separation efficiency to 88.3% at 1.23 V vs RHE. The DFT calculations have illustrated that Ti-doping modification could decrease the polaron hopping energy barrier, narrow the Eg, and decrease the overpotential of the oxygen evolution reaction (OER) concurrently. With further spin-coated FeOOH cocatalyst, the photoanode has a photocurrent density of 3.99 mA cm–2 at 1.23 V vs RHE. The excellent PEC performance of FeOOH/Ti:BiVO4 is attributed to the synergistic effect of the FeOOH layer and Ti doping, which could promote charge carrier separation and transfer by expediting polaron migration.
科研通智能强力驱动
Strongly Powered by AbleSci AI