范德瓦尔斯力
材料科学
异质结
电介质
纳米技术
凝聚态物理
带隙
光电子学
工程物理
化学物理
物理
量子力学
分子
作者
Aljoscha Söll,Edoardo Lopriore,Asmund Ottesen,Jan Luxa,Gabriele Pasquale,Jiří Šturala,František Hájek,V. Jarý,David Sedmidubský,Kseniia Mosina,Igor Sokolović,Saeid Rasouli,T. Grasser,Ulrike Diebold,András Kis,Zdeněk Sofer
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-04-01
标识
DOI:10.1021/acsnano.3c10411
摘要
van der Waals heterostructures of two-dimensional materials have unveiled frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap, high-κ layered dielectrics for devices based on van der Waals structures has been relatively limited. In this work, we demonstrate an easily reproducible synthesis method for the rare-earth oxyhalide LaOBr, and we exfoliate it as a 2D layered material with a measured static dielectric constant of 9 and a wide bandgap of 5.3 eV. Furthermore, our research demonstrates that LaOBr can be used as a high-κ dielectric in van der Waals field-effect transistors with high performance and low interface defect concentrations. Additionally, it proves to be an attractive choice for electrical gating in excitonic devices based on 2D materials. Our work demonstrates the versatile realization and functionality of 2D systems with wide-gap and high-κ van der Waals dielectric environments.
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