A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed

GaN-based solutions can handle emerging technological demands from today’s fast-changing electronics industry. AlGaN/GaN heterostructures offer the possibility of a variety of applications. The primary issues in commercializing GaN-based technology are reliability and performance enhancement. This research focuses on recent improvements in AlGaN/GaN-based high-electron-mobility transistors (HEMTs) for diverse high-speed applications. This review will assist researchers in gathering all relevant knowledge on AlGaN/GaN HEMT structure in one location, allowing them to focus on developing high-speed applications.