欧姆接触
氧化剂
外延
化学吸附
图层(电子)
材料科学
兴奋剂
分析化学(期刊)
薄膜
混合(物理)
光电子学
化学
纳米技术
吸附
物理化学
色谱法
量子力学
物理
有机化学
作者
V. Battut,Juliette Blanc,E. Goumet,Véronique Soulière,Y. Monteil
标识
DOI:10.1016/s0040-6090(99)00135-2
摘要
n-InP epitaxial thin layers are exposed to concentrations of a diluted oxidizing gas: NO2. In the presence of this gas, the resistance measured parallel to the surface of the InP layer, between ohmic contacts, increases. The magnitude of its variations depends on several parameters: the operating temperature, the thickness and the doping concentration level of the InP layer, and the gas concentration. A theoretical model of the action of the gas is proposed, mixing chemisorption equilibrium and surface field effect. The experimental results are in agreement with the theoretical predictions.
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