Resistivity measurement of ZnO:AI films for solar cell

AI~minium doped Zinc Oxide films were dep.osited on glass slide by RF magnetron sputtering using a ZnO target mlxe.d with A1203. All the films w 7 re growth In room temperature without intentional heating. The resistivity of the ZnO.AI films were measured uSing van der Pauw method in terms of the preparation conditions such as RF power, worki.ng pressure, deposition ti~e, O2 content in sputtering gas and target-substrate distance. Resistivity of t.he deposited ~Im~ show~ the following behaviours: decreases with the increasing RF power and film thickness While Incr~ase. With Increas~ng target substrate distance, and 02 content in sputtering gas. Resistivity for films prepared In different working pressure decreases with the Argon pressure but increased after the optimal pressure of 45mTorr.