修边
乘数(经济学)
电压
材料科学
CMOS芯片
硅
光电子学
灵敏度(控制系统)
电压倍增器
电子工程
电压基准
电气工程
计算机科学
跌落电压
工程类
操作系统
宏观经济学
经济
作者
S. Prasad,Pradip Kumar Mandal
标识
DOI:10.1109/icvd.2004.1260977
摘要
A new implementation has been proposed for the beta multiplier voltage reference to improve its performance with regard to process variations. The scope for silicon tunability on the proposed circuit is also discussed. The circuit was implemented in a 0.18 /spl mu/ process and was found to have a temperature sensitivity of less than 500 ppm/C in the virgin die without trimming.
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