铝
杂质
材料科学
硅
太阳能电池
外延
金属
相(物质)
开路电压
晶体硅
相图
光电子学
冶金
复合材料
图层(电子)
电压
化学
电气工程
有机化学
工程类
作者
J. A. Amick,Frank J. Bottari,J. I. Hanoka
摘要
For crystalline silicon solar cells having an alloyed aluminum back contact, open-circuit voltage increases with aluminum thickness. The increase is ascribed to the formation of a p+/p "high-low " junction by liquid-phase epitaxy, resulting in increased efficiency for the cell. With thick aluminum layers, the characteristics of the p+ regrown region are in reasonable agreement withpredictions based on the A1-Si phase diagram. With thin aluminum layers the junction is nonideal, and the improvement in Voo is much smaller. Pile-up of metallic impurities, at the aluminum/p + interface is attributed to rejection of these impurities during the silicon regrowth process. The formation of back contacts to silicon solar cells by a luminum alloying is well known. Typically, an a luminum layer is fo rmed on the back surface of a p-type silicon wafer, typically by evaporation or sputtering I'2 or by print-ing of an a luminum paste. 3-s The contact is subsequently " formed " by an appropriate heat-treatment. Thicker layers of a luminum typically lead to improved cell performance, particularly with respect to open-circuit voltage (Voo) and
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