物理
拉伤
国家(计算机科学)
绝缘体(电)
计算机科学
算法
生物
光电子学
解剖
作者
Siyavash Moradi,Ali Sadeghi
出处
期刊:Physical review
[American Physical Society]
日期:2024-01-30
卷期号:109 (3)
被引量:4
标识
DOI:10.1103/physrevb.109.035165
摘要
The electronic structure and topological state of an ${\mathrm{MoS}}_{2}$ monolayer decorated by iron or vanadium adatoms is investigated by first-principles calculations. It is shown that several Chern insulator phases occur in these samples in the presence of external strain or electric field. In particular, Chern number $\mathcal{C}=2$ is achieved by applying 6% biaxial tensile strain on the V-decorated ${\mathrm{MoS}}_{2}$ monolayer or 10% on the Fe-decorated one. On the other hand, the intrinsic $\mathcal{C}=1$ phase of the iron system is switched to the normal insulator phase under an electric field of 0.8 V/\AA{}, while the vanadium system with intrinsic $\mathcal{C}=\ensuremath{-}1$ state adopts a $\mathcal{C}=1$ state if the electric field reaches 0.7 V/\AA{}. The induced band inversion may coincide with an abrupt increase of magnetization and a simultaneous change in the adatom adsorption height, or a magnetization decrement without displacement of the adatom. Our findings suggest that applying an in-plane biaxial tensile strain is a promising direction to search high Chern number states.
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