离子束
离子束沉积
溅射
离子
聚焦离子束
离子束混合
材料科学
辐照
航程(航空)
离子注入
沉积(地质)
梁(结构)
离子源
离子枪
电子束诱导沉积
离子束辅助沉积
原子物理学
薄膜
化学
光学
纳米技术
透射电子显微镜
核物理学
物理
扫描透射电子显微镜
复合材料
古生物学
有机化学
生物
沉积物
作者
Patrick Philipp,Grégoire R N Defoort-Levkov,Alan Bahm,Tom Wirtz
标识
DOI:10.1016/j.apsusc.2023.158172
摘要
Ion beam processes are used in many applications, including surface patterning, milling, implantation, sample characterisation and sample preparation for electron microscopy. The use of ultra-low energies in the sub-keV range allows to reduce the implantation depth of the ion species, and hence to reduce the irradiation induced damage in the sample. In the current study we explore the potential of a simple experimental setup for ultra-low energy ion beam processes in the impact energy range of 50 eV to 500 eV and pay attention to the ion-beam induced processes on the sample surface. Our work shows that when ion beam process related to milling need to be well controlled, ion beam induced deposition of residual gas molecules in the instrument chamber needs to be considered. Depending on ion energy and irradiation density, ion induced sputtering and deposition can compete. Hence, the quality of the vacuum can significantly impact the process. Experimental sputtering yields were difficult to obtain, therefore reference values for a large range of angles and energies were simulated.
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