Impact of Molybdenum Oxide Electrode on the Ferroelectricity of Doped-Hafnia Oxide Capacitors

In this article, we investigate the role of MoOxoxide electrodes on the ferroelectric properties of hafnium zirconium oxide (HZO) capacitors. The MoOxoxide electrodes were deposited under different oxygen partial pressure ratios ($\text{O}_{\text {ppr}}$: 0%, 5%, 10%, and 15%) during the sputtering process. The remnant polarization (${P}_{r}$) of the HZO capacitors with MoOxelectrodes (18.9$\mu \text{C}$/cm2for 10%$\text{O}_{\text {ppr}}$) are improved higher than that of the TiN electrode (14.9$\mu \text{C}$/cm2) by 27%. In addition, the HZO films with MoOxelectrodes have smaller leakage current and larger breakdown electric field (${E}_{\text {BD}}$). Based on the polarization reversal theory, the interfacial capacitance (${C}_{i}$) and coercive field (${E}_{c}$) were calculated in the case of the devices with MoOxelectrodes, indicating that the MoOxelectrode can minimize the thickness of the non-ferroelectric dead layer at the bottom interface. These results are expected to provide a new way out to optimize the interface quality and ferroelectricity in HZO-based capacitors and ferroelectric memory.