Lv1
20 积分 2025-10-11 加入
Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
5个月前
已完结
Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
6个月前
已完结
Effects of Interface Traps on Ferroelectric Field-Effect Transistors with Random Crystal Phase Fluctuations
6个月前
已完结
Etching characteristics of TiN used as hard mask in dielectric etch process
6个月前
已关闭
Effects of SiO2∕Si3N4 hard masks on etching properties of metal gates
6个月前
已关闭
Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation
6个月前
已完结
Atomic layer deposition
7个月前
已关闭
Atomic layer deposition
7个月前
已关闭
On the Evaluation of Remnant Polarization in 3D Cylindrical Hafnia-Based Ferroelectric Capacitors
7个月前
已完结
Controllable formation of HfO2 thin film in 20-nm-thick lateral trenches with high aspect ratio up to 30
7个月前
已完结
皖公网安备34019202002308
