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50 积分 2022-10-24 加入
Analysis and Performance Trade-Offs of State-of-the-Art 4H-SiC Trench MOSFET Technology
9天前
已完结
Characterization and comparison of 1.2 kV SiC power semiconductor devices
9天前
已完结
Model evaluation and improvement for commercially available silicon carbide power MOSFETs
9天前
已完结
Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kV SiC MOSFETs Across Multiple Vendors and Generations
9天前
已完结
Characterization of 1.2 kV SiC Power MOSFETs at Cryogenic Temperatures
9天前
已完结
1200V 4H-SiC Trench Devices
9天前
已关闭
Characterization and comparison of latest generation 900-V and 1.2-kV SiC MOSFETs
9天前
已完结
Impacts of silicon carbide defects on electrical characteristics of SiC devices
10天前
已完结
Failure and Degradation Analysis of Commercial 1.2-kV SiC Trench MOSFETs Under Repetitive Short-Circuit Stress
10天前
已完结
Evolution of Gate-Oxide Interface Traps in Planar SiC MOSFET Under Repeated Short-Circuit Stress
10天前
已完结
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