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180 积分 2022-10-24 加入
Power cycling methods for SiC MOSFETs
4个月前
已完结
Investigations on the Degradations of Double-Trench SiC Power MOSFETs Under Repetitive Avalanche Stress
4个月前
已完结
1200V 4H-SiC Trench Devices
4个月前
已关闭
Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
4个月前
已完结
High performance SiC trench devices with ultra-low ron
4个月前
已完结
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
4个月前
已完结
Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress
4个月前
已完结
Observation of minority carrier traps using C-DLTS in Au/SiO2/n-4H-SiC vertical MOS capacitor
4个月前
已完结
Electric Characterization of SiC Trench MOSFETs with DLTS and Admittance Spectroscopy
4个月前
已完结
Analysis and Performance Trade-Offs of State-of-the-Art 4H-SiC Trench MOSFET Technology
5个月前
已完结
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