Lv4
445 积分 2025-09-26 加入
Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing
3天前
已完结
Impact of Sputter Deposition Parameters on the Leakage Current Behavior of Aluminum Nitride Thin Films
3天前
已完结
Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth
1个月前
已关闭
X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)
1个月前
已完结
Pressure Sensors Based on the Third-Generation Semiconductor Silicon Carbide: A Comprehensive Review
1个月前
已完结
Site-competition epitaxy for superior silicon carbide electronics
1个月前
已完结
Low-temperature homoepitaxial growth of α-SiC on on-axis (0001) substrate by vapor–liquid–solid mechanism
1个月前
已关闭
Homoepitaxial Growth of 4H-SiC Thin Film Below 1000°C by Microwave Plasma Chemical Vapor Deposition
1个月前
已完结
Low Temperature Epitaxy grown AlN Metal-Insulator-Semiconductor Diodes on AlGaN/GaN HEMT structure
1个月前
已完结
Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC
2个月前
已完结
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