| 标题 |
Transition From Current Collapse-Limited to Capacitance-Limited Efficiency in GaN HEMTs via Field-Plate Engineering |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Jiongjiong Mo; Beibei Lv; Zichen Guo; Zhiyu Wang; Xuran Zhao 出版日期:2026-06-01 |
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(2025-6-4)