| 标题 |
Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering |
| 网址 | |
| DOI | |
| 其它 |
期刊:ACS Applied Materials and Interfaces 作者:Y. Goh; Junghyeon Hwang; S. Jeon 出版日期:2020-12-12 |
| 求助人 | |
| 下载 |
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(2025-6-4)