| 标题 |
Effect of Gamma Radiation on Static DC, Reliability, and RF Performance of Submicron GaN-on-Si RF MIS-HEMTs With In Situ SiN |
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| DOI | |
| 其它 |
期刊:IEEE transactions on device and materials reliability 作者:Anant Johari; Chin-Ya Su; Der-Sheng Chao; Ankur Gupta; Rajendra Singh; et al 出版日期:2025-09-01 |
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(2025-6-4)