| 标题 |
 A novel low channel resistance LDMOS with planar and trench gates[C]//Proceedings of 2019 IEEE International Conference on Integrated Circuits, Technologies and Applications 一种具有平面和沟槽栅极的新型低沟道电阻LDMOS[C]//2019 IEEE集成电路、技术与应用国际会议论文集
|
| 网址 | |
| DOI |
10.1109/ICTA48799
doi
|
| 其它 |
KONG M F, LIU C, CHEN H Z, et al. A novel low channel resistance LDMOS with planar and trench gates[C]//Proceedings of 2019 IEEE International Conference on Integrated Circuits, Technologies and Applications. Piscataway: IEEE, 2019: 119-120. DOI: 10.1109/ ICTA48799.2019.9012904 |
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(2025-6-4)
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