| 标题 |
Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device |
| 网址 | |
| DOI | |
| 其它 |
期刊:Advanced electronic materials 作者:Yuanyuan Zhu; Pengwei Cheng; Jing Shi; Hongjun Wang; Yong Liu; et al 出版日期:2019-12-17 |
| 求助人 | |
| 下载 |
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(2025-6-4)