| 标题 |
 Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices |
| 网址 | |
| DOI | |
| 其它 |
期刊：Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 作者：Toshio Kamiya; Zahid A. K. Durrani; Haroon Ahmed; Toshiyuki Sameshima; Yoshikazu Furuta; et al 出版日期：2003-06-06 |
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