| 标题 |
Performance Comparison of GaN-based HEMTs on β-Ga2O3 Substrates Using Compositionally-Graded InGaN and AlGaN Back Barriers for High Frequency Applications
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| 其它 |
Jiavana, KFK; Bha, JKK; (...); Natarajan, R Jan 2026 SEMICONDUCTORS 60(1), pp.100-113 |
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(2025-6-4)
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