Demonstration of Ultraviolet μLED Array With Novel Electrical Contact Etch Mask

We report on the realization of a uniform array of electrically driven, individually addressable micro light-emitting diodes ( $\mu $ LEDs) with diameters of $2.5~\mu \text{m}$ emitting at 372 nm. This highly ordered array was fabricated via a top-down fabrication approach using a novel Ni/Au/Ni structure which combines both a Ni/Au low-resistance electrical contact and durable Ni etch mask. The use of this novel structure allows individual $\mu $ LEDs to be addressed with promising electroluminescence intensity and narrow linewidth at ultraviolet-A (UV-A) band. This improved control over $\mu $ LED output power and emission location makes our approach an important step towards the development of high efficiency UV-A $\mu $ LEDs for a range of applications.