衰减器(电子)
宽带
电气工程
单片微波集成电路
电容感应
补偿(心理学)
接头(建筑物)
材料科学
光电子学
电子工程
工程类
电信
物理
光学
衰减
CMOS芯片
心理学
放大器
建筑工程
精神分析
作者
Zhangyong Li,Wei Zhang,Dongning Hao,Xiubo Liu,Liang Yu,Yanyan Liu
标识
DOI:10.1109/lmwt.2023.3339812
摘要
This letter presents a broadband, low insert loss (IL) 6-bit switch-type digital step attenuator (DSA) implemented in a 0.25- $\mu \text{m}$ GaAs pHEMT process. The $\pi $ -type attenuation units adopt the proposed capacitive-inductive joint compensation technique, in which the inductor demonstrates an effective zero-pole adjustment to broaden the bandwidth. This DSA maintains a 31.5 dB attenuation range with a 0.5 dB step. Measured results indicate that the root-mean-square (rms) amplitude error is below 0.35 dB and the rms phase error is less than 5° from dc to 23 GHz. The IL is 4.0–6.2 dB. The core area excluding pads is only 0.47 mm2. To the best of our knowledge, this attenuator achieves the widest operating bandwidth among the switch-type GaAs DSAs.
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