Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

The electrical properties of single Cd 1-x Mn x Te (x = 0.07-0.39)crystals with a resistivity of ≈ 10 8 Ω cm at 300 K have been studied.The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes.The energy of ionization and the degree of compensation levels have been found.