Fabrication of InGaZnO-SnO2/PCBM hybrid electron transfer layer for high-performance Perovskite solar cell and X-ray detector

We developed heterojunction electron-transfer layers (ETLs) comprising layers of metal oxides and phenyl-C71-butyric acid methyl ester (PCBM) for use in glass/indium tin oxide/hole transport layer/Perovskite/ETL/LiF/Al solar cells and X-ray detectors. Indium gallium zinc oxide (IGZO), tin oxide (SnO2), or IGZO/SnO2 layers were stacked on a PCBM layer via radio frequency (RF) magnetron sputtering at various temperatures. The formation of the metal-oxide layers and on a PCBM film were confirmed by conducting compositional and elemental mapping studies. Current-voltage experimental results show that the heterojunction fabricated by forming a IGZO/SnO2 layer on a PCBM film possessed higher charge carrier capacity and exciton dissociation properties compared with using either IGZO or SnO2 separately. The Perovskite solar cell with an IGZO/SnO2@100/PCBM (100 refers 100oC of RF sputtering temperature) ETL attained a power conversion efficiency (PCE) of 12.56 ± 0.15%, which was 36% more efficient than a device with a pure PCBM ETL (PCE = 9.22 ± 0.09%). Moreover, an X-ray detector fabricated with an IGZO/SnO2@100/PCBM ETL obtained a maximum sensitivity of 3.98 mA/Gy·cm2 and collected charge density (CCD)-dark current density (DCD) of 13.29 μA/cm2.