Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications

The development status of Ovonic Unified Memory (OUM), a phase-change non-volatile semiconductor memory technology for VLSI stand-alone memory and embedded applications, is discussed. Using 0.18 μm 3 V CMOS, cells from 5F/sup 2/ to 8F/sup 2/ are built in a charge-pump-free 4 Mb development vehicle. Direct overwrite, 10 ns reset times, 50 ns set times, and 1.0×10/sup 12/ cycling are achieved. At en-year data retention is projected at 120°C.