期刊：Electronics Letters [Institution of Engineering and Technology] 日期：1977-01-01卷期号：13 (10): 291-291被引量：5
标识
DOI：10.1049/el:19770213
摘要
High-speed double-heterostructure GaAs superluminescent diodes have been fabricated. Risetimes of 2 ns at optical linewidths of 10 nm have been achieved.
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