Photosensitivity in doped and sensitized cis‐polyphenylacetylene

Abstract The photosensitivity in cis‐polyphenylacetylene (cis‐PPA, polymerized with rare‐earth catalysts) can be significantly enhanced by doping the PPA with I2 or FeCl3 and sensitizing with 4‐isothiocyanatofluorescein (F‐II) or 2,4,7‐trinitro‐9‐fluorenone (TNF), which are powerful sensitizers. The electrophotographic photoreceptor (P/R) device with cis‐PPA + F‐II (on Al substrate) appeared preferable in photosensitivity enhancement and showed good photosensitivity: dark decay 1,8 V/s; maximum rate of discharge 321 V/s; residual surface potential 22 V; discharge 89, 1%; photosensitivity 2,96 s−1. This is a new “family” of photosensitive materials which can be used in a duplicator.