Photosensitivity in doped and sensitized cis‐polyphenylacetylene

Abstract The photosensitivity in cis ‐polyphenylacetylene ( cis ‐PPA, polymerized with rare‐earth catalysts) can be significantly enhanced by doping the PPA with I 2 or FeCl 3 and sensitizing with 4‐isothiocyanatofluorescein (F‐II) or 2,4,7‐trinitro‐9‐fluorenone (TNF), which are powerful sensitizers. The electrophotographic photoreceptor (P/R) device with cis ‐PPA + F‐II (on Al substrate) appeared preferable in photosensitivity enhancement and showed good photosensitivity: dark decay 1,8 V/s; maximum rate of discharge 321 V/s; residual surface potential 22 V; discharge 89, 1%; photosensitivity 2,96 s −1 . This is a new “family” of photosensitive materials which can be used in a duplicator.