Development of composite vertical wet etching for silicon material

In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25V is applied and the catalytic material is 10nm in thickness, a 30μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.