High operating temperature linear mode HgCdTe avalanche photodiodes for the extended SWIR

We report new results on Linear Mode HgCdTe electron Avalanche Photodiodes (e-APDs) for applications in the 500 - 3000 nm band at 200-240K with high gain, low excess noise factor, low dark current density and high quantum efficiency. Results from two classes of devices will be reported: first the conventional HgCdTe e-APD grown by LPE with homogeneous composition and second bandgap engineered HgCdTe e-APDs grown by MBE. Detailed characterization data of the e-APDs including gain, dark current density and excess noise factor will be reported and compared with modeling results.