晶体管
电阻式触摸屏
CMOS芯片
堆积
电气工程
光电子学
材料科学
电流(流体)
电子工程
工程类
电压
物理
核磁共振
作者
Tong Zhang,Dingguo Zhang,Jing Jin,Patrick P. Mercier,Hui Wang
标识
DOI:10.1109/iscas58744.2024.10557912
摘要
This paper presents the design and analysis of a family of voltage reference generators (VRGs) based on the stacking of a current-source transistor MI and a resistive-load transistor MR, i.e., stacking of MI,R (SMIR) in standard CMOS technology for sub-1V and sub-nW operation. Design guidelines are provided to obtain the reference voltage for various temperature characteristics, namely proportional to absolute temperature (PTAT), complementary to absolute temperature (CTAT), and constant with temperature (CWT), by appropriately sizing the two transistors as current source and load respectively. The proposed 6 such SMIR VRGs in 65nm consume an average power less than 4pW and occupy an area less than 30µm × 100µm when measured from 20 different samples. All VRGs operate at a minimum supply voltage of 0.4V and achieve an average line regulation better than 0.3%/V. For the CWT VRGs, an average temperature coefficient better than 260.9ppm/°C is achieved from -20°C to 80°C.
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