Strain and composition engineering of excited-state carrier recombination dynamics in GaAs/GaP and GaAs/AlAs superlattices: insights from time-domain nonadiabatic molecular dynamics simulations

Strain engineering in GaAs/GaP and GaAs/AlAs superlattices enables carrier lifetime tuning from picosecond to nanosecond levels, supporting applications such as photovoltaic cells, photodetectors, and light-emitting diodes.