石英晶体微天平
原子层沉积
钼
薄膜
电致变色
材料科学
钛
氧化物
氧化钛
无机化学
化学工程
图层(电子)
纳米技术
化学
电极
吸附
冶金
物理化学
工程类
作者
A. M. Maksumova,Ilmutdin M. Abdulagatov,Д. К. Палчаев,М. Х. Рабаданов,А. И. Абдулагатов
标识
DOI:10.1134/s0036024422100181
摘要
A study is performed of the thermal atomic layer deposition (ALD) of molybdenum oxide (MoOx) films using MoOCl4 and H2O and titanium–molybdenum oxide (TixMoyOz) thin films using TiCl4, MoOCl4, and H2O. Film growth is investigated via in situ quartz crystal microbalance (QCM) in the 115 to 180°C range of temperatures. ALD processes are considered for TixMoyOz films with different ratios of TiCl4–H2O and MoOCl4–H2O subcycles in a supercycle. The linear growth of a film upon an increase in the number of ALD cycles is in all cases established. The surface reactions of halides and H2O are shown to be of a self-limiting. The QCM data show the considered surface chemistry can be used for depositing thin MoOx and TixMoyOz films. Fields of potential application of these thin films a catalysis, electrochromic devices, lithium-ion batteries, antibacterial coatings and others.
科研通智能强力驱动
Strongly Powered by AbleSci AI