材料科学
铟
位错
微晶
微观结构
氧化铟锡
晶界
兴奋剂
锡
结晶学
散射
离子
凝聚态物理
薄膜
光学
冶金
复合材料
光电子学
纳米技术
化学
物理
有机化学
作者
Masayuki Kamei,Yuzo Shigesato,Satoru Takaki,Yasuo Hayashi,Mikio Sasaki,T. E. Haynes
摘要
The microstructure of heteroepitaxial tin-doped indium oxide (ITO) films were studied in detail. The surface morphology of the heteroepitaxial ITO film consisted of square-shaped, in-plane oriented subgrains (∼300 Å) in contrast to that of the polycrystalline film (characteristic grain-subgrain structure). The subgrain boundaries were predominantly formed along the {110} planes in the ITO film and dislocations were observed primarily along the subgrain boundaries. Ion channeling measurements showed the dislocation density of this film to be approximately 3×1010/cm2, and the angular distribution of the ion channeling yield showed that the subgrains are aligned to within better than 0.3° (standard deviation).
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