电子背散射衍射
反射高能电子衍射
电子衍射
菊池线
衍射
散射
电子
光学
气电子衍射
扫描电子显微镜
反向散射(电子邮件)
材料科学
能量过滤透射电子显微镜
电子散射
电子显微镜
物理
分子物理学
扫描透射电子显微镜
计算机科学
电信
量子力学
无线
标识
DOI:10.1111/j.1365-2818.2009.03353.x
摘要
This paper presents a tutorial discussion of the principles underlying the depth-dependent Kikuchi pattern formation of backscattered electrons in the scanning electron microscope. To illustrate the connections between various electron diffraction methods, the formation of Kikuchi bands in electron backscatter diffraction in the scanning electron microscope and in transmission electron microscopy are compared with the help of simulations employing the dynamical theory of electron diffraction. The close relationship between backscattered electron diffraction and convergent beam electron diffraction is illuminated by showing how both effects can be calculated within the same theoretical framework. The influence of the depth-dependence of diffuse electron scattering on the formation of the experimentally observed electron backscatter diffraction contrast and intensity is visualized by calculations of depth-resolved Kikuchi patterns. Comparison of an experimental electron backscatter diffraction pattern with simulations assuming several different depth distributions shows that the depth-distribution of backscattered electrons needs to be taken into account in quantitative descriptions. This should make it possible to obtain more quantitative depth-dependent information from experimental electron backscatter diffraction patterns via correlation with dynamical diffraction simulations and Monte Carlo models of electron scattering.
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