Comparison of Etching Characteristics of Polymers by 193 nm and 308 nm Excimer Laser Radiation

In this paper, experimental study of two kinds of typical excimer lasers (XeCl: 308 nm, 30 ns and ArF: 193 nm,17 ns) etching PC, PI, and PMMA is described. The mechanism of excimer laser etching polymer is mainly discussed, and the performances of the two kinds of excimer lasers etching the polymers are compared.