Recent progress in theoretical and experimental studies of metal-doped silicon clusters: Trend among elements of periodic table

Metal doped silicon clusters with potential applications in the field of optoelectronics, magnetic and nanomaterials have been extensively studied during last decade. Here in, a comprehensive review of theoretical as well as experimental studies on metal-doped silicon clusters with emphasis on trends among various elements of periodic table (i.e. transition metal, alkali metals, alkaline earth metals and lanthanides) as dopant for silicon clusters is presented. Geometries, electronic properties, stabilities, electron affinities, ionization potential and growth behavior of metal-doped Si clusters are discussed. The application of 18 and 20 electron rule, the trends of magic number and stable symmetries of various metal doped Si (MSin) clusters have been reviewed. Current review may provide more insights into the trend of various elements of periodic table for metal-doped silicon clusters and will contribute towards the designing of stable, symmetrical silicon clusters with enhanced chemical and physical properties with wide applications.