Design and TCAD analysis of few-layer graphene/ZnO nanowires heterojunction-based photodetector in UV spectral region

Graphene and zinc oxide (ZnO) nanowires (NWs)-based photodetectors demonstrate excellent photodetection performance in the ultraviolet (UV) spectrum regime. This paper presents the design and analysis of a heterostructure model of p+-few-layer graphene (p+-FLG)/n--ZnO NWs-based UV photodetector. The design utilizes the unique properties of few-layer graphene to enhance light absorption and improve photodetector performance. The analysis under both self-biasing and conductive modes of operation reveals that the integrated electric field and the photovoltaic effect at the p⁺-FLG/n⁻-ZnO NWs hetero-interface create a rectifying behavior. The photodetector achieves an external photocurrent responsivity, external quantum efficiency, detectivity, and noise equivalent power of 0.12 A/W, 44.1%, 1.9 × 109 Jones, and 5.6 × 10-14 W, respectively, under UV illumination at 350 nm, 0 V bias, and 300 K. Additionally, the photodetector exhibits ultrafast photoswitching rise and fall times of 0.26 ns and a 3-dB cut-off frequency of 1.31 GHz. The comparative analysis with existing photodetectors demonstrates that the proposed model surpasses many in sensitivity, speed, and efficiency. The enhancement of charge collection with the applied reverse-biased voltage results in a response time of 0.16 ns, a peak photocurrent responsivity of 0.2 A/W, a maximum external quantum efficiency of 61%, a peak detectivity of 2.4 × 109 Jones, and minimum noise equivalent power of 4.4 × 10-14 W at - 0.5 V. The findings inspire the development of next-generation self-driving, highly efficient, broadband photodetectors, and other economically viable and multifunctional optoelectronic devices.