Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure

diffusion from the Ge substrate Also, Zhang et al. reported that the exposure of O radicals to the Al 2 O 3 /Ge structure leads to the formation of the GeO x interfacial layer The GeO x formation immediately causes the increase in the EOT, although the interface state density effectively decreases. In this study, we focus on the O supply from an Al 2 O 3 film by the N radical irradiation process. We can lead to the chemical reaction in the films and at the interface at wide process temperature by using the radical process since radicals have the high internal energy. In addition, we have proposed the N radical irradiation process to Al 2 O 3 /Ge and HfO 2 /Si structures to improve on the interfacial properties N radicals break the O-Al or O-Hf bond and the O atoms are supplied from the oxide film to the interface. As a result, the interface state density of the Al 2 O 3 /Ge structure decreases after the N radical process However, the interfacial reactions at Al 2 O 3 /Ge interface with N radical process have not clarified yet. It is necessary to understand the crystalline structure and electrical properties of the Al 2 O 3 /Ge interface after N radical process in detail.