P‐11.8: GaN‐Based Micro‐LED Sidewall Defect Reduction via Plasma Pre‐Treatment and Atomic Layer Deposition

Micro‐LED has received wide attention from researchers and has been applied into micro‐display technology due to its superior performance and development potential. However, The external quantum efficiency of Micro‐LED decreases with the decrease of size, due to an increase in the proportion of sidewall defects at smaller size. Therefore, the sidewall treatment of Micro‐LED is particularly important. In this study, the mechanism of the impact of H2 and NH3 plasma pre‐treatment on sidewalls and the subsequent effect of Al2O3 deposition on the electrical performance of the device were explored. The results demonstrate that plasma pre‐treatment with H2 and NH3, followed by Al2O3 deposition, effectively reduces surface defects, leakage current, and the ideality factor.