氧化物
硅
材料科学
金属
过程(计算)
光电子学
冶金
计算机科学
操作系统
标识
DOI:10.1109/cstic.2016.7464019
摘要
DCE(Trans-Dichloroethylene, Trans_LC, C2H2C L2,) has a widely used in semiconductor fab oxide furnace. It's a key factor which can affect silicon oxide growth speed and SiO2 layer quality. As the size and the line width of the integrated circuit reducing, more and more DCE oxidation process are introduced. DCE can remove metal ion in furnace and fix metal ion in chip device and improve silicon oxide quality. In this paper, we have studied DEC's characteristic and introduced DEC's application in oxide furnace.
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