异质结
材料科学
电子
光电子学
费米气体
领域(数学)
工程物理
纳米技术
物理
数学
量子力学
纯数学
作者
Xinyi Zhu,Tianbao Zhang,Yongjie He,Yuhang Liu,Hao Zhu
出处
期刊:Nanoscale
[Royal Society of Chemistry]
日期:2023-01-01
卷期号:15 (28): 12071-12077
被引量:7
摘要
The impact of the annealing process and oxide thickness on the 2DEG formed in the Al 2 O 3 /ZnO heterostructure is studied. FET device application with improved electrical performance is further realized based on the carrier tuning of the 2DEG system.
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